Question: Consider the following statements: Compared to Silicon, Gallium Arsenide (GaAs) has: 1. Higher signal speed since electron mobility is higher 2. Poorer crystal quality since stoichiometric growth difficult 3. Easier to grow crystals since the vapor pressure Arsenic is high 4. Higher optoelectronic conversion efficiencyOf these statements:
Answer:
MCQ: Consider the following statements: Compared to Silicon, Gallium Arsenide (GaAs) has: 1. Higher signal speed since electron mobility is higher 2. Poorer crystal quality since stoichiometric growth difficult 3. Easier to grow crystals since the vapor pressure Arsenic is high 4. Higher optoelectronic conversion efficiencyOf these statements:
Correct Answer:
A. 1, 2, 3 and 4 are correct
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Related Questions
- 1. In an intrinsic semiconductor, the mobility of electrons in the conduction band is:
- 2. The Hall coefficient of sample (A) of a semiconductor is measured at room temperature. The Hall coefficient of (A) at room temperature is 4×10<sup>–4</sup> m<sup>3</sup> coulomb<sup>–1</sup>. The carrier concentration in sample A at room temperature is:
- 3. In a semiconductor, <em>J, J<sub>p</sub> </em>and <em>J<sub>n</sub> </em>indicate total diffusion current density hole current density and electron current density respectively, <em>∂n</em>/<em>∂x</em> and <em>∂p</em>/<em>∂x</em> are the electron and hole concentration gradient respectively in <em>x</em>-direction and <em>D<sub>p</sub> </em>and <em>D<sub>n</sub> </em>are the hole and electron diffusion constants respectively. Which one of the following equations is correct? (<em>e </em>denotes charge of electron.)
- 4. If the drift velocity of holes under a field gradient of 100v/m is 5m/s, the mobility (in the same SI units) is
- 5. The Hall Effect voltage in intrinsic silicon is:
- 6. The Hall coefficient of an intrinsic semiconductor is:
- 7. Consider the following statements: pure germanium and pure silicon are examples of: 1. Direct band-gap semiconductors 2. Indirect band-gap semiconductors 3. Degenerate semiconductors Of these statements:
- 8. When <em>n<sub>e</sub></em> and <em>n<sub>h</sub></em> are electron and hole densities, and <em>µ<sub>e</sub></em> and <em>µ<sub>n</sub></em> are the carrier mobilities, the Hall coefficient is positive whenn<sub>h</sub>µ<sub>h</sub> < n<sub>e</sub>µ<sub>h</sub>
- 9. A long specimen of p-type semiconductor material:
- 10. The electron and hole concentrations in a intrinsic semiconductor are <em>n<sub>i</sub></em> and <em>p<sub>i</sub></em> respectively. When doped with a <em>p</em>-type material, these change to <em>n</em> and <em>p</em>, respectively. Then:
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