Question: In a semiconductor, <em>J, J<sub>p</sub> </em>and <em>J<sub>n</sub> </em>indicate total diffusion current density hole current density and electron current density respectively, <em>∂n</em>/<em>∂x</em> and <em>∂p</em>/<em>∂x</em> are the electron and hole concentration gradient respectively in <em>x</em>-direction and <em>D<sub>p</sub> </em>and <em>D<sub>n</sub> </em>are the hole and electron diffusion constants respectively. Which one of the following equations is correct? (<em>e </em>denotes charge of electron.)
Answer:
MCQ: In a semiconductor, <em>J, J<sub>p</sub> </em>and <em>J<sub>n</sub> </em>indicate total diffusion current density hole current density and electron current density respectively, <em>∂n</em>/<em>∂x</em> and <em>∂p</em>/<em>∂x</em> are the electron and hole concentration gradient respectively in <em>x</em>-direction and <em>D<sub>p</sub> </em>and <em>D<sub>n</sub> </em>are the hole and electron diffusion constants respectively. Which one of the following equations is correct? (<em>e </em>denotes charge of electron.)
Correct Answer:
A. <em>J<sub>n</sub></em> = <em>–eD<sub>n</sub></em>(<em>∂n</em>/<em>∂x</em>) for electrons
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Related Questions
- 1. If the drift velocity of holes under a field gradient of 100v/m is 5m/s, the mobility (in the same SI units) is
- 2. The Hall Effect voltage in intrinsic silicon is:
- 3. The Hall coefficient of an intrinsic semiconductor is:
- 4. Consider the following statements: pure germanium and pure silicon are examples of: 1. Direct band-gap semiconductors 2. Indirect band-gap semiconductors 3. Degenerate semiconductors Of these statements:
- 5. When <em>n<sub>e</sub></em> and <em>n<sub>h</sub></em> are electron and hole densities, and <em>µ<sub>e</sub></em> and <em>µ<sub>n</sub></em> are the carrier mobilities, the Hall coefficient is positive whenn<sub>h</sub>µ<sub>h</sub> < n<sub>e</sub>µ<sub>h</sub>
- 6. A long specimen of p-type semiconductor material:
- 7. The electron and hole concentrations in a intrinsic semiconductor are <em>n<sub>i</sub></em> and <em>p<sub>i</sub></em> respectively. When doped with a <em>p</em>-type material, these change to <em>n</em> and <em>p</em>, respectively. Then:
- 8. If the temperature of an extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then:
- 9. At room temperature, the current in an intrinsic semiconductor is due to
- 10. A small concentration of minority carriers is injected into a homogeneous semiconductor crystal at one point. An electric field of 10 V.cm is applied across the crystal and this moves the minority carriers a distance of 1 cm is 20 µsec. The mobility (in cm<sup>2</sup>/volt.sec) is:
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