Question: In a <em>p</em>-type semiconductor, the conductivity due to holes (<em>σ<sub>p</sub></em>) is equal to (<em>e</em> is the charge of hole, <em>µ<sub>p</sub></em> is the hole mobility, <em>p</em>0 is the hole concentration):<em>1.p</em>0.<em>e</em>/<em>µ<sub>p</sub></em><em>2.µ<sub>p</sub>/p</em>0.<em>e</em>3.<em>p</em>0.<em>e</em>.<em>µ<sub>p</sub></em>4.None of the above.
Answer:
µp/p0.e
p0.e.µp
MCQ: In a <em>p</em>-type semiconductor, the conductivity due to holes (<em>σ<sub>p</sub></em>) is equal to (<em>e</em> is the charge of hole, <em>µ<sub>p</sub></em> is the hole mobility, <em>p</em>0 is the hole concentration):<em>1.p</em>0.<em>e</em>/<em>µ<sub>p</sub></em><em>2.µ<sub>p</sub>/p</em>0.<em>e</em>3.<em>p</em>0.<em>e</em>.<em>µ<sub>p</sub></em>4.None of the above.
Correct Answer:
A. 1 and 2
Explanation:
µp/p0.e
p0.e.µp
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Related Questions
- 1. The difference between the electron and hole Fermi energies of a semiconductor laser is 1.5eV and the band gap of the semiconductor is 1.43eV. The upper and lower frequency limits of the laser will be respectively:
- 2. A sample of <em>n</em>-type semiconductor has electron density of 6.25 x 10<sup>18</sup>/cm<sup>3</sup> at 300K. If the intrinsic concentration of carriers in this sample is 2.5 x 10<sup>13</sup>/cm<sup>3</sup>, at this temperature, the hole density becomes:
- 3. The intrinsic carrier density at 300K is 1.5 x 10<sup>10</sup>/cm<sup>3</sup> in silicon. For <em>n</em>-type silicon doped to 2.25 x 10<sup>15</sup> atoms/cm<sup>3</sup>, the equilibrium electron and hole densities are:
- 4. In a <em>p</em>-type silicon sample, the hole concentration is 2.25 x 10<sup>15</sup>/cm<sup>3</sup>. If the intrinsic carrier concentration 1.5 x 10<sup>10</sup>/cm<sup>3</sup>, the electron concentration is
- 5. A good ohmic contact on a <em>p</em>-type semiconductor chip is formed by introducing:
- 6. Measurement of Hall coefficient in a semiconductor provides information on the:
- 7. In a <em>p–n junction</em> diode: <table> <tbody> <tr> <td>1.The depletion capacitance increases with increase in the reverse-bias</td> </tr> <tr> <td>2.The depletion capacitance decreases with increase in the reverse-bias</td> </tr> <tr> <td>3.The diffusion capacitance increases with increase in the forward-bias</td> </tr> <tr> <td>4.The diffusion capacitance is much higher than the depletion capacitance when it is forward-biased</td> </tr> </tbody> </table>
- 8. A <em>p–n</em> junction in series with a 100 ohms resistor is forward-biased so that a current of 100 mA flows. If the voltage across this combination is instantaneously reversed to 10 volt at <em>t</em> = 0 the reverse current that flows through the diode at <em>t</em> = 0 is approximately given by:
- 9. The width of the depletion region is:
- 10. The Fermi energy in <em>p–n</em> junction at thermal equilibrium is:
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