Question: In a <em>p</em>-type silicon sample, the hole concentration is 2.25 x 10<sup>15</sup>/cm<sup>3</sup>. If the intrinsic carrier concentration 1.5 x 10<sup>10</sup>/cm<sup>3</sup>, the electron concentration is
Answer:
MCQ: In a <em>p</em>-type silicon sample, the hole concentration is 2.25 x 10<sup>15</sup>/cm<sup>3</sup>. If the intrinsic carrier concentration 1.5 x 10<sup>10</sup>/cm<sup>3</sup>, the electron concentration is
Correct Answer:
A. 10<sup>21</sup>/cm<sup>3</sup>
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Related Questions
- 1. A good ohmic contact on a <em>p</em>-type semiconductor chip is formed by introducing:
- 2. Measurement of Hall coefficient in a semiconductor provides information on the:
- 3. In a <em>p–n junction</em> diode: <table> <tbody> <tr> <td>1.The depletion capacitance increases with increase in the reverse-bias</td> </tr> <tr> <td>2.The depletion capacitance decreases with increase in the reverse-bias</td> </tr> <tr> <td>3.The diffusion capacitance increases with increase in the forward-bias</td> </tr> <tr> <td>4.The diffusion capacitance is much higher than the depletion capacitance when it is forward-biased</td> </tr> </tbody> </table>
- 4. A <em>p–n</em> junction in series with a 100 ohms resistor is forward-biased so that a current of 100 mA flows. If the voltage across this combination is instantaneously reversed to 10 volt at <em>t</em> = 0 the reverse current that flows through the diode at <em>t</em> = 0 is approximately given by:
- 5. The width of the depletion region is:
- 6. The Fermi energy in <em>p–n</em> junction at thermal equilibrium is:
- 7. The depletion capacitance, <em>C<sub>j</sub></em> of an abrupt <em>p–n</em> junction with constant doping on either side varies with reverse bias, <em>V<sub>R</sub></em>, as:
- 8. Gold is often diffused into silicon <em>p–n</em> junction devices to:
- 9. In a forward-biased photo diode with increase in incident light intensity, the diode current:
- 10. The current through a <em>p</em>–<em>n</em> junction diode with V volts applied to the <em>p</em>-region relative to the <em>n</em>-region (where <em>I<sub>O</sub></em> is the reverse saturation current of the diode, <em>η</em> the ideality factor, <em>K</em> the Boltzmann constant, <em>T</em> the absolute temperature and <em>e</em> the magnitude of charge on an electron) is:
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