Question: The current through a <em>p</em>–<em>n</em> junction diode with V volts applied to the <em>p</em>-region relative to the <em>n</em>-region (where <em>I<sub>O</sub></em> is the reverse saturation current of the diode, <em>η</em> the ideality factor, <em>K</em> the Boltzmann constant, <em>T</em> the absolute temperature and <em>e</em> the magnitude of charge on an electron) is:
Answer:
MCQ: The current through a <em>p</em>–<em>n</em> junction diode with V volts applied to the <em>p</em>-region relative to the <em>n</em>-region (where <em>I<sub>O</sub></em> is the reverse saturation current of the diode, <em>η</em> the ideality factor, <em>K</em> the Boltzmann constant, <em>T</em> the absolute temperature and <em>e</em> the magnitude of charge on an electron) is:
Correct Answer:
A. <em>I</em><sub>0</sub>(–<em>eV</em>/<em>e<sup>mKT</sup></em> –1)
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Related Questions
- 1. The varactor diode is:
- 2. The electric field in abrupt <em>p–n</em> junction is:
- 3. In a linearly-graded <em>p–n</em> junction the doping concentration:
- 4. A <em>p–n</em> junction, which is produced by recrystallisation on a base crystal, from a liquid phase of one or more components and the semiconductor is called:
- 5. In an open circuit <em>p–n</em> junction, the energy band diagram of <em>n</em>-region shifts relative to that of <em>p</em>-diagram:
- 6. The contact potential <em>V<sub>0</sub></em> in a <em>p</em>–<em>n</em> diode equals:
- 7. Each diode of full wave centre-tapped rectifier conducts for:
- 8. Bulk resistance of a diode is:
- 9. In unbiased <em>p</em>–<em>n</em> junction, thickness of depletion layer is of the order of:
- 10. In a diode circuit, the point where the diode starts conducting is known as:
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