Question: The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 V. When the device is biased at a gate voltage of 3 V. Pinch-off would occur at a drain voltage of:
Answer:
MCQ: The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 V. When the device is biased at a gate voltage of 3 V. Pinch-off would occur at a drain voltage of:
Correct Answer:
A. 1 V
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Related Questions
- 1. Bipolar transistors are ____________ than field effect transistor.
- 2. The main factor, which differentiates a D-MOSFET from an E-MOSFET, in the absence of:
- 3. In order to protect a MOSFET against damage from any stray voltage at the gate:
- 4. n-channel FET’s are superior to p-channel FET’s because:
- 5. Pinch-off voltage V<sub>p</sub> for an FET is the drain voltage at which:
- 6. The transconductance g<sub>m</sub> of a diffused JFET is the order of:
- 7. The gate-to-source resistance of an FET is of the order of:
- 8. Inter-electrode capacitances in an FET are of the order of:
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