With each visit of this Electronics Devices and Circuits online Quiz / Practice Test, the list of MCQs / Objective Questions presented will be different, offering you a diverse set of practice opportunities. This variability encourages you to practice extensively, refining the accuracy of your answers and your overall grasp of the content. By utilizing this resource, you can hone your skills and become more adept at managing time constraints during actual exams.
Test Instructions Question type Randomized MCQs.Changes every time you visit the test Total Number of Questions 30 Time Limit 20 Minutes Points 1 Point for each Question
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Question 1 of 30
Q-1.Silicon is not suitable for fabrication of light-emitting diodes because it is:
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Question 2 of 30
Q-2.Radar is a device with the help of which we can
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Question 3 of 30
Q-3.Avalanche breakdown in The Crystal diode occurs when
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Question 4 of 30
Q-4.Compared to a CE stage, a swamped amplifier has an input impedance that is
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Question 5 of 30
Q-5.The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 V. When the device is biased at a gate voltage of 3 V. Pinch-off would occur at a drain voltage of:
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Question 6 of 30
Q-6.the most important application of an IC is in
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Question 7 of 30
Q-7.The valence electron of a conductor is also called a
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Question 8 of 30
Q-8.How much voltage is there across the second approximation of a silicon diode when it is forward biased?
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Question 9 of 30
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Question 10 of 30
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Question 11 of 30
Q-11.Lissajous figure at a 45 degree angle means:
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Question 12 of 30
Q-12.If the input is a rectangular pulse, the output of an integrator is a
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Question 13 of 30
Q-13.The varactor diode is:
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Question 14 of 30
Q-14.The triac is equivalent to
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Question 15 of 30
Q-15.With an ICVS amplifier, the circuit approximates an ideal
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Question 16 of 30
Q-16.Varactor diodes are used in FM receivers to obtain:
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Question 17 of 30
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Question 18 of 30
Q-18.A cascode amplifier has the advantage of
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Question 19 of 30
Q-19.At room temperature an intrinsic silicon crystal acts approximately like
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Question 20 of 30
Q-20.An n-channel JFET has a pinch-off voltage of Vp = –5 V, VDS (max) = 20 V, and gm = 2 mA/V. The minimum ON resistance is achieved in the JFET for:
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Question 21 of 30
Q-21.Which of the following doesn’t fit in the group?
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Question 22 of 30
Q-22.When the collector current increases, what does the current gain do?
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Question 23 of 30
Q-23.The cutoff frequency of an op amp equals the unity-gain frequency divided by
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Question 24 of 30
Q-24.If the emitter bypass capacitor opens, the ac output voltage will
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Question 25 of 30
Q-25.Larger the value of the capacitor filter:
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Question 26 of 30
Q-26.In an npn transistor, the majority carriers in the base are
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Question 27 of 30
Q-27.The voltage that turns on an EMOS device is the
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Question 28 of 30
Q-28.The Thevenin voltage is the same as the
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Question 29 of 30
Q-29.If the emitter resistance increases in a VDB circuit, the collector voltage
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Question 30 of 30
Q-30.The load voltage is approximately constant when a zener diode is
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