Question: A silicon sample is uniformly doped with 10<sup>16</sup> phosphorus atoms/cm<sup>3</sup> and 2 × 10<sup>16</sup> boron atoms/cm<sup>3</sup>. If all the dopants are fully ionized, the material is:
Answer:
MCQ: A silicon sample is uniformly doped with 10<sup>16</sup> phosphorus atoms/cm<sup>3</sup> and 2 × 10<sup>16</sup> boron atoms/cm<sup>3</sup>. If all the dopants are fully ionized, the material is:
Correct Answer:
A. n-type with carrier concentration of 3 × 10<sup>16</sup>/cm<sup>3</sup>
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Related Questions
- 1. n-type semiconductors are:
- 2. The probability that an electron in a metal occupies the Fermi-level, at any temperature (>0 K) is:
- 3. Measurement of Hall coefficient enables the determination of:
- 4. If the energy gap of a semiconductor is 1.1 e V it would be:
- 5. The conductivity of an intrinsic semiconductor is given by (symbols have the usual meanings):
- 6. Consider the following statements: Compared to Silicon, Gallium Arsenide (GaAs) has: 1. Higher signal speed since electron mobility is higher 2. Poorer crystal quality since stoichiometric growth difficult 3. Easier to grow crystals since the vapor pressure Arsenic is high 4. Higher optoelectronic conversion efficiencyOf these statements:
- 7. In an intrinsic semiconductor, the mobility of electrons in the conduction band is:
- 8. The Hall coefficient of sample (A) of a semiconductor is measured at room temperature. The Hall coefficient of (A) at room temperature is 4×10<sup>–4</sup> m<sup>3</sup> coulomb<sup>–1</sup>. The carrier concentration in sample A at room temperature is:
- 9. In a semiconductor, <em>J, J<sub>p</sub> </em>and <em>J<sub>n</sub> </em>indicate total diffusion current density hole current density and electron current density respectively, <em>∂n</em>/<em>∂x</em> and <em>∂p</em>/<em>∂x</em> are the electron and hole concentration gradient respectively in <em>x</em>-direction and <em>D<sub>p</sub> </em>and <em>D<sub>n</sub> </em>are the hole and electron diffusion constants respectively. Which one of the following equations is correct? (<em>e </em>denotes charge of electron.)
- 10. If the drift velocity of holes under a field gradient of 100v/m is 5m/s, the mobility (in the same SI units) is
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