Question: Consider the following statements: Compared to Silicon, Gallium Arsenide (GaAs) has: 1. Higher signal speed since electron mobility is higher 2. Poorer crystal quality since stoichiometric growth difficult 3. Easier to grow crystals since the vapor pressure Arsenic is high 4. Higher optoelectronic conversion efficiencyOf these statements:
Answer:
MCQ: Consider the following statements: Compared to Silicon, Gallium Arsenide (GaAs) has: 1. Higher signal speed since electron mobility is higher 2. Poorer crystal quality since stoichiometric growth difficult 3. Easier to grow crystals since the vapor pressure Arsenic is high 4. Higher optoelectronic conversion efficiencyOf these statements:
Correct Answer:
A. 1, 2, 3 and 4 are correct
Discuss a Question
Related Questions
- 1. In an intrinsic semiconductor, the mobility of electrons in the conduction band is:
- 2. The Hall coefficient of sample (A) of a semiconductor is measured at room temperature. The Hall coefficient of (A) at room temperature is 4×10<sup>–4</sup> m<sup>3</sup> coulomb<sup>–1</sup>. The carrier concentration in sample A at room temperature is:
- 3. In a semiconductor, <em>J, J<sub>p</sub> </em>and <em>J<sub>n</sub> </em>indicate total diffusion current density hole current density and electron current density respectively, <em>∂n</em>/<em>∂x</em> and <em>∂p</em>/<em>∂x</em> are the electron and hole concentration gradient respectively in <em>x</em>-direction and <em>D<sub>p</sub> </em>and <em>D<sub>n</sub> </em>are the hole and electron diffusion constants respectively. Which one of the following equations is correct? (<em>e </em>denotes charge of electron.)
- 4. If the drift velocity of holes under a field gradient of 100v/m is 5m/s, the mobility (in the same SI units) is
- 5. The Hall Effect voltage in intrinsic silicon is:
- 6. The Hall coefficient of an intrinsic semiconductor is:
- 7. Consider the following statements: pure germanium and pure silicon are examples of: 1. Direct band-gap semiconductors 2. Indirect band-gap semiconductors 3. Degenerate semiconductors Of these statements:
- 8. When <em>n<sub>e</sub></em> and <em>n<sub>h</sub></em> are electron and hole densities, and <em>µ<sub>e</sub></em> and <em>µ<sub>n</sub></em> are the carrier mobilities, the Hall coefficient is positive whenn<sub>h</sub>µ<sub>h</sub> < n<sub>e</sub>µ<sub>h</sub>
- 9. A long specimen of p-type semiconductor material:
- 10. The electron and hole concentrations in a intrinsic semiconductor are <em>n<sub>i</sub></em> and <em>p<sub>i</sub></em> respectively. When doped with a <em>p</em>-type material, these change to <em>n</em> and <em>p</em>, respectively. Then:
You may be interested in:
Basic Electronics / Electronics Devices and Circuits Multiple Choice Questions And Answers (MCQs)Recently Added Articles
How Do Java Development Teams Use Docker and Kubernetes to Deploy Applications?
Last updated on: April 24, 2026Posted by: ExamRadar
AI vs Machine Learning: Key Differences Every Professional Should Know
Last updated on: February 13, 2026Posted by: ExamRadar
Office Cleaning Services That Elevate Sydney Offices
Last updated on: February 11, 2026Posted by: ExamRadar
What You Actually Learn About Exam Patterns From RBI Grade B Previous Year Papers?
Last updated on: February 9, 2026Posted by: ExamRadar
Mental Health Support That’s Closer Than You Think
Last updated on: January 7, 2026Posted by: ExamRadar
Transform Your Home’s Exterior with Columbus roofing company
Last updated on: November 27, 2025Posted by: ExamRadar
