Question: The electron and hole concentrations in a intrinsic semiconductor are <em>n<sub>i</sub></em> and <em>p<sub>i</sub></em> respectively. When doped with a <em>p</em>-type material, these change to <em>n</em> and <em>p</em>, respectively. Then:
Answer:
MCQ: The electron and hole concentrations in a intrinsic semiconductor are <em>n<sub>i</sub></em> and <em>p<sub>i</sub></em> respectively. When doped with a <em>p</em>-type material, these change to <em>n</em> and <em>p</em>, respectively. Then:
Correct Answer:
A. <em>n + p = n<sub>i</sub> + p<sub>i</sub></em>
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Related Questions
- 1. If the temperature of an extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then:
- 2. At room temperature, the current in an intrinsic semiconductor is due to
- 3. A small concentration of minority carriers is injected into a homogeneous semiconductor crystal at one point. An electric field of 10 V.cm is applied across the crystal and this moves the minority carriers a distance of 1 cm is 20 µsec. The mobility (in cm<sup>2</sup>/volt.sec) is:
- 4. The mobility is given by (notations have their usual meaning):
- 5. Hall effect is observed in a specimen when it (metal or a semiconductor) is carrying current and is placed in a magnetic field. The resultant electric field inside the specimen will be in:
- 6. In a <em>p</em>-type semiconductor, the conductivity due to holes (<em>σ<sub>p</sub></em>) is equal to (<em>e</em> is the charge of hole, <em>µ<sub>p</sub></em> is the hole mobility, <em>p</em>0 is the hole concentration):<em>1.p</em>0.<em>e</em>/<em>µ<sub>p</sub></em><em>2.µ<sub>p</sub>/p</em>0.<em>e</em>3.<em>p</em>0.<em>e</em>.<em>µ<sub>p</sub></em>4.None of the above.
- 7. The difference between the electron and hole Fermi energies of a semiconductor laser is 1.5eV and the band gap of the semiconductor is 1.43eV. The upper and lower frequency limits of the laser will be respectively:
- 8. A sample of <em>n</em>-type semiconductor has electron density of 6.25 x 10<sup>18</sup>/cm<sup>3</sup> at 300K. If the intrinsic concentration of carriers in this sample is 2.5 x 10<sup>13</sup>/cm<sup>3</sup>, at this temperature, the hole density becomes:
- 9. The intrinsic carrier density at 300K is 1.5 x 10<sup>10</sup>/cm<sup>3</sup> in silicon. For <em>n</em>-type silicon doped to 2.25 x 10<sup>15</sup> atoms/cm<sup>3</sup>, the equilibrium electron and hole densities are:
- 10. In a <em>p</em>-type silicon sample, the hole concentration is 2.25 x 10<sup>15</sup>/cm<sup>3</sup>. If the intrinsic carrier concentration 1.5 x 10<sup>10</sup>/cm<sup>3</sup>, the electron concentration is
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