Question: In a transistor h<sub>fe</sub> = 50, h<sub>ie</sub> = 830 ohms, h<sub>oe</sub> = 10<sup>–4</sup> mho. When used as in the CB mode, then its output resistance will be:
Answer:
MCQ: In a transistor h<sub>fe</sub> = 50, h<sub>ie</sub> = 830 ohms, h<sub>oe</sub> = 10<sup>–4</sup> mho. When used as in the CB mode, then its output resistance will be:
Correct Answer:
A. 2 m Ohms
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Related Questions
- 1. For obtaining hybrid parameters of a transistor:
- 2. The condition necessary to calculate h<sub>oe</sub> of a transistor:
- 3. The approximate value of input impedance of a common emitter amplifier with emitter resistance R<sub>e</sub> is given by:
- 4. FET is a:
- 5. FET is a:
- 6. The pinch-off voltage of JFET is 5.0 volts. Its cut-off voltage is:
- 7. An n-channel JFET has a pinch-off voltage of V<sub>p</sub> = –5 V, V<sub>DS</sub> (max) = 20 V, and g<sub>m</sub>= 2 mA/V. The minimum ON resistance is achieved in the JFET for:
- 8. The threshold voltage of an n-channel MOSFET can be increased by:
- 9. Two identical FET’s each characterized by the parameters g<sub>m</sub> and r<sub>d</sub> are connected in parallel. The composite FET is then characterized by the parameters:
- 10. An n-channel JEET has I<sub>DSS</sub> = 2 mA and V<sub>p</sub> = –4 v. Its transconductance g<sub>m</sub> ( in milli mho) for an applied gate-to-source voltage V<sub>Gs</sub> of –2 V is:
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