Question: An n-channel JFET has a pinch-off voltage of V<sub>p</sub> = –5 V, V<sub>DS</sub> (max) = 20 V, and g<sub>m</sub>= 2 mA/V. The minimum ON resistance is achieved in the JFET for:
Answer:
MCQ: An n-channel JFET has a pinch-off voltage of V<sub>p</sub> = –5 V, V<sub>DS</sub> (max) = 20 V, and g<sub>m</sub>= 2 mA/V. The minimum ON resistance is achieved in the JFET for:
Correct Answer:
A. VGS = –7 V and VDS = 0 V
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Related Questions
- 1. The threshold voltage of an n-channel MOSFET can be increased by:
- 2. Two identical FET’s each characterized by the parameters g<sub>m</sub> and r<sub>d</sub> are connected in parallel. The composite FET is then characterized by the parameters:
- 3. An n-channel JEET has I<sub>DSS</sub> = 2 mA and V<sub>p</sub> = –4 v. Its transconductance g<sub>m</sub> ( in milli mho) for an applied gate-to-source voltage V<sub>Gs</sub> of –2 V is:
- 4. The V-I characteristic of an n-channel depletion FET drain–source output has:
- 5. For an enhancement-type MOSFET the output V-I characteristic of has:
- 6. For an n-channel JFET, having drain–source voltage constant if the gate–source voltage is increased to more negative pinch-off would occur for:
- 7. For a junction FET in the pinch-off region, as the drain voltage is increased, the drain current:
- 8. Now a days in MOSFET’s the material used for the gate is:
- 9. An n-channel JFET has I<sub>DS</sub> whose value is:
- 10. The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 V. When the device is biased at a gate voltage of 3 V. Pinch-off would occur at a drain voltage of:
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