With each visit of this Electronics Devices and Circuits online Quiz / Practice Test, the list of MCQs / Objective Questions presented will be different, offering you a diverse set of practice opportunities. This variability encourages you to practice extensively, refining the accuracy of your answers and your overall grasp of the content. By utilizing this resource, you can hone your skills and become more adept at managing time constraints during actual exams.
Test Instructions Question type Randomized MCQs.Changes every time you visit the test Total Number of Questions 30 Time Limit 20 Minutes Points 1 Point for each Question
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Question 1 of 30
Q-1.The vacuum tubes are generally operated in the
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Question 2 of 30
Q-2.The negative resistance characteristics of a tetrods is known as
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Question 3 of 30
Q-3.If Beta = 200 and re = 150 ohm, the input impedance of the base is approximately
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Question 4 of 30
Q-4.If a load resistance is 1 kΩ, a stiff voltage source has a resistance of
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Question 5 of 30
Q-5.In a half wave rectifier, the load current flows
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Question 6 of 30
Q-6.The threshold voltage of an n-channel MOSFET can be increased by:
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Question 7 of 30
Q-7.The 741C has a unity-gain frequency of
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Question 8 of 30
Q-8.The material with the piezoelectric effect is
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Question 9 of 30
Q-9.When ne and nh are electron and hole densities, and µe and µn are the carrier mobilities, the Hall coefficient is positive whennh µh < ne µh
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Question 10 of 30
Q-10.The difference between the electron and hole Fermi energies of a semiconductor laser is 1.5eV and the band gap of the semiconductor is 1.43eV. The upper and lower frequency limits of the laser will be respectively:
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Question 11 of 30
Q-11.For an n-channel JFET, having drain–source voltage constant if the gate–source voltage is increased to more negative pinch-off would occur for:
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Question 12 of 30
Q-12.The minimum anode current that keeps a thyristor turned on is called the
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Question 13 of 30
Q-13.A thyratron can be used as a controller rectifier
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Question 14 of 30
Q-14.Transformer coupling is an example of
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Question 15 of 30
Q-15.Which of the following cannot move?
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Question 16 of 30
Q-16.Consider the following statements: Compared to Silicon, Gallium Arsenide (GaAs) has:
1. Higher signal speed since electron mobility is higher
2. Poorer crystal quality since stoichiometric growth difficult
3. Easier to grow crystals since the vapor pressure Arsenic is high
4. Higher optoelectronic conversion efficiencyOf these statements:
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Question 17 of 30
Q-17.The stray-wiring capacitance has an effect on the
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Question 18 of 30
Q-18.What is the most important fact about the collector current?
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Question 19 of 30
Q-19.In a
p–n junction diode:
1.The depletion capacitance increases with increase in the reverse-bias 2.The depletion capacitance decreases with increase in the reverse-bias 3.The diffusion capacitance increases with increase in the forward-bias 4.The diffusion capacitance is much higher than the depletion capacitance when it is forward-biased
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Question 20 of 30
Q-20.Trivalent atoms have how many valence electrons?
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Question 21 of 30
Q-21.The Q of a Sallen-Key second-order stage depends on the
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Question 22 of 30
Q-22.The load voltage is approximately constant when a zener diode is
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Question 23 of 30
Q-23.The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 V. When the device is biased at a gate voltage of 3 V. Pinch-off would occur at a drain voltage of:
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Question 24 of 30
Q-24.If the secondary voltage increases in a bridge rectifier with a capacitor-input filter, the load voltage will
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Question 25 of 30
Q-25.If the bulk resistance is zero, the graph above the knee becomes
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Question 26 of 30
Q-26.A p-type and n-type semiconductor attend positive and negative charge respectively
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Question 27 of 30
Q-27.A small collector current with zero base current is caused by the leakage current of the
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Question 28 of 30
Q-28.A Zener diode is based on the principle of:
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Question 29 of 30
Q-29.The kind of oscillator found in an electronic wristwatch is the
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Question 30 of 30
Q-30.The input offset current is usually
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