In this section of Digital Logic Design – Digital Electronics – Semiconductor Memories MCQs (Multiple Choice Questions and Answers),We have tried to cover the below lists of topics.All these MCQs will help you prepare for the various Competitive Exams and University Level Exams.

  1. Memory Unit MCQs.
  2. Concept of Memory Using Resistors MCQs.
  3. ROM-Read Only Memory MCQs.
  4. RAM-Random Access Memory MCQs.
  5. PAL-Programmable Array Logic MCQs.
  6. PLA-Programmable Logic Arrays MCQs.
  7. Buffer MCQs.
  8. Cache Memory MCQs.

PRACTICE IT NOW TO SHARPEN YOUR CONCEPT AND KNOWLEDGE

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1. Which of the following memories are non volatile memories?

  • ROM
  • PROM
  • Ferrite core memory
  • None of the above

2. The access time of bipolar RAM is of the order of

  • 20 nSec
  • 20 micro sec
  • 20 milli sec
  • 20 sec

3. The access time of MOS RAM is of the order of

  • 1 nano sec
  • 1 micro sec
  • 1 milli sec
  • 1 sec

4. Which of the following memories has the highest storage capacity?

  • Magnetic tape
  • Ferrite core memory
  • Semiconductor memory
  • Magnetic disc

5. RAM is also known as

  • RWM
  • PROM
  • EAROM
  • EPROM

6. The memory in which the stored data is lost, when power is switched off is

  • ROM
  • Ferrite core memory
  • RAM
  • PROM

7. A RAM is

  • Non-volatile memory
  • Only static memory
  • Only dynamic memory
  • Volatile and either static or dynamic memory

8. The density of dynamic RAM is

  • More than that of the static RAM
  • Less than that of the static RAM
  • Equal to that the static RAM
  • Equal to or more than that of the static RAM

9. The power consumption of the dynamic RAM is

  • More than that of the static RAM
  • Equal to that the static RAM
  • Less than that of the static RAM
  • Zero

10. The cost of the dynamic RAM for each bit of storage is nearly

  • Equal to that of the static RAM
  • Double of that of the static RAM
  • Five times that of the static RAM
  • One fifth of that of the static RAM

11. A PLA is a

  • SSI device
  • MSI Device
  • LSI Device
  • VLSI device

12. The capacity or size of a PLA is specified by the

  • Number of inputs
  • Number of product terms
  • Number of outputs
  • All of the above

13. PROM are available in

  • Bipolar version only
  • MOS version only
  • both Bipolar and MOS version
  • None of the above

14. Periodic re-charging of the memory cells at regular interval of 3 to 8 millisec is required in a

  • ROM
  • Static RAM
  • Dynamic RAM
  • PLA

15. The advantage of dynamic RAMs over static RAMs is

  • Lower power consumption
  • High capacity
  • Lower cost per bit
  • All of the above

16. Which of the following memories can be programmed once by the user and then can not be erased and reprogrammed?

  • ROM
  • PROM
  • EPROM
  • EEPROM
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